Si7655DN -20 V P-Channel MOSFET

Vishay introduces the -20 V P-Channel MOSFET in 3.3 mm square package with industry-low on-resistance

Image of Vishay/Siliconix's Si7655DN, −20 V P-Channel MOSFETVishay's Si7655DN, -20 V p-channel MOSFET in a 3.3 mm by 3.3 mm package offers on-resistance of just 4.8 mΩ maximum at a 4.5 V gate drive. The Si7655DN is also the first device to be released in a new version of the Vishay Siliconix PowerPAK® 1212 package, which enables lower-RDS(ON) devices while providing a 28 % slimmer nominal profile of 0.75 mm and maintaining the same PCB land pattern.

Benefits Applications
  • New version of 3.3 mm by 3.3 mm PowerPAK 1212 package features a slimmer 0.75 mm profile
  • Saves valuable board space and height
  • Utilizes industry-leading P-channel Gen III technology
  • Ultra-low maximum on-resistance of 3.6 mΩ at a 10 V gate drive, 4.8 mΩ at 4.5 V, and 8.5 mΩ at 2.5 V
  • Improvement of 17 % or better over next best competing -20 V devices
  • Allows designers to achieve lower voltage drops in their circuits and longer battery run times 
  • Load switching and hot swapping in industrial systems; adaptor, battery, and load switches in charger circuits; and power management for smart phones, tablet PCs, and other mobile computing devices
  • Redundancy switching, OR-ing, and supervisory applications in fixed telecom, cell phone base station, and server/computer systems


ImageManufacturer Part NumberDescriptionAvailable Quantity
SI7655DN-T1-GE3 datasheet linkMOSFET P-CH 20V 40A PPAK 1212SI7655DN-T1-GE3MOSFET P-CH 20V 40A PPAK 12122753 - Immediate
SI7655DN-T1-GE3 product page link
Published: 2013-07-02