N-Channel TrenchFET® Gen III Power MOSFETs with TurboFET™

Vishay and Digi-Key offer low switching losses and faster switching

Image of Vishay/Siliconix's N-Channel TrenchFET® Gen III Power MOSFETs with TurboFET™Vishay has expanded its family of Gen III TrenchFET power MOSFETs with the release of two 20 V and two 30 V n-channel devices that are the first to offer TurboFET technology, which utilizes a new charge balanced drain structure to lower the gate charge by up to 45%, enabling significantly lower switching losses and faster switching.

The devices are used as the high-side MOSFET in synchronous buck converters, helping to save power in notebook computers, voltage regulator modules (VRMs), servers, and other systems using point-of-load (POL) power conversion.

  • Charge balanced TrenchFET Gen III utilizing TurboFET drain structure technology provides record-breaking gate charge while maintaining excellent on-resistance performance
    • On-resistance times gate-drain charge FOM down to 23.2 mΩ-nC at VGS = 4.5 V
    • Low switching losses enable high efficiency and low power consumption
  • Lower gate charge enables higher frequency operation, allowing the use of smaller passive components in dc-to-dc converters
  • Available in thermally advanced PowerPAK® 1212-8 and PowerPAK SO-8 packages
  • High-side MOSFET in synchronous buck
    • Notebook Computers
    • VRMs
    • Servers
    • Systems using point-of-load (POL)

N Channel Mosfet

ImageManufacturer Part NumberDescriptionAvailable Quantity
SIR496DP-T1-GE3 datasheet linkMOSFET N-CH 20V 35A PPAK SO-8SIR496DP-T1-GE3MOSFET N-CH 20V 35A PPAK SO-80SIR496DP-T1-GE3 product page link
SIS426DN-T1-GE3 datasheet linkMOSFET N-CH 20V 35A 1212-8SIS426DN-T1-GE3MOSFET N-CH 20V 35A 1212-80SIS426DN-T1-GE3 product page link
Published: 2009-04-09