-12 V and -20 V P-Channel Gen III MOSFETs

Vishay offers -12 V and -20 V MOSFETs with industry-low RDS(on) in 3.0 mm by 1.9 mm and 3.3 mm sq. footprints

Image of Vishay/Siliconix's -12 V and -20 V P-Channel Gen III MOSFETsVishay extends its offering of TrenchFET® P-channel Gen III Power MOSFETs with new devices in the PowerPAK® ChipFET® and PowerPAK 1212-8S packages. Designed to increase power efficiency in mobile computing and industrial control devices, the Vishay Siliconix MOSFETs feature the industry's lowest on-resistance for -12 V and -20 V devices at -4.5 V and -2.5 V gate drives in the 3.0 mm by 1.9 mm and 3.3 mm by 3.3 mm footprint areas. With their industry-low on-resistance at -4.5 V and -2.5 V gate drives, the Si5411EDU, Si5415AEDU, and SiSS23DN allow designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times. In applications where saving PCB space is critical, the -12 V Si5411EDU and -20 V Si5415AEDU offer low on-resistance down to 8.2 mΩ (-4.5 V) and 11.7 mΩ (-2.5 V) in the 3.0 mm by 1.9 mm PowerPAK ChipFET package. For applications requiring extremely-low on-resistance, the SiSS23DN provides values of 4.5 mΩ ( -4.5 V) and 6.3 mΩ (-2.5 V) in the 3.3 mm by 3.3 mm PowerPAK 1212-8S package with a low 0.75 mm profile.

Features Applications
  • Compact 3.0 mm by 1.9 mm PowerPAK ChipFET and 3.3 mm by 3.3 mm PowerPAK 1212-8S packages save PCB space
  • Feature -12 V and -20 V voltage ratings
  • Industry-low on-resistance down to 4.5 mΩ (-4.5 V) and 6.3 mΩ (-2.5 V)
  • Promote more efficient use of power and longer battery run times
  • ESD protection of 5,000 V (Si5411EDU and Si5415AEDU)
  • 100 % Rg and UIS tested
  • Halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU
  • Load, battery, and supervisory switches in power management for smartphones, tablets, notebooks, industrial sensors, and POL modules

12 V and 20 V PChannel Gen III MOSFETs

ImageManufacturer Part NumberDescriptionAvailable Quantity
SISS23DN-T1-GE3 datasheet linkMOSFET P-CH 20V 50A PPAK 1212-8SSISS23DN-T1-GE3MOSFET P-CH 20V 50A PPAK 1212-8S1667 - Immediate
SISS23DN-T1-GE3 product page link
SI5411EDU-T1-GE3 datasheet linkMOSFET P-CH 12V 25A PPAK CHIPFETSI5411EDU-T1-GE3MOSFET P-CH 12V 25A PPAK CHIPFET539 - Immediate
SI5411EDU-T1-GE3 product page link
SI5415AEDU-T1-GE3 datasheet linkMOSFET P-CH 20V 25A CHIPFETSI5415AEDU-T1-GE3MOSFET P-CH 20V 25A CHIPFET0SI5415AEDU-T1-GE3 product page link
Published: 2013-11-19