STMicroelectronics’ advanced 600 V trench-gate field-stop IGBT V series have a smooth and tail-less turn-off characteristic, saturation voltage as low as 1.8 V, and maximum operating junction temperature of 175°C, allowing increased system energy efficiency, higher switching frequencies, and simplified thermal and EMI design.
ST’s new devices increase switching efficiency and maximum operating frequency by eliminating the conventional IGBT turn-off current tail and have ultra-thin die thickness to assist switching performance and improve thermal dissipation. The proprietary optimized trench-gate field-stop process provides improved thermal resistance and maximum junction temperature up to 175°C, as well as tight control over parameters such as saturation voltage, allowing safe paralleling of multiple IGBTs and enabling a greater current density and higher on-state efficiency.
The new IGBTs are extremely robust, featuring high dV/dt capability. A co-packaged, ultra-fast soft-recovery diode minimizes turn-on energy losses. Diode-free variants are also available for more cost-sensitive applications.
ST’s V series IGBTs rated from 20 A to 80 A are in production now in TO-3P, TO-3PF, TO-220, TO-220FP, TO-247, or D2PAK packages.
to view all of STMicroelectronics' "Tail-less" 600 V IGBT V series.
to view all of STMicroelectronics' IGBTs.