STMicroelectronics' DeepGATE™ low-voltage MOSFETs set a class standard for on-state resistance, enhancing energy efficiency and reliability of telecom, server, industrial, and automotive applications.
The STripFET™ VII DeepGate™, rated at 80 V and 100 V with an enhanced trench gate structure, sets a record in on-state resistance value. The STP310N10F7 and STH310N10F7-2, housed respectively in TO-220 and H2PAK 2 leads, offer the industry's lowest on-state resistance in the power discrete market. The STripFET™ VII DeepGATE™ series enables lower power consumption and higher power density by providing low on-state resistance in thru-hole and surface-mount packages, reduced number of paralleled devices reduced switching off losses, excellent behavior to EMI, and availability in powerful chip-scale PowerFLAT packages.
The gate structures high power design can be simplified by reducing the number of paralleled devices. In addition, with the improved figure of merit and recovery diodes, this technology is also ideal for high frequency switching applications and synchronous rectification found in DC-DC converters, bridge converters, ATX power supplies, and inverters.