MDmesh™ V Power MOSFETs

STMicroelectronics' MDmesh™ V eclipses previous record for lowest RDS(on)

Image of STMicroelectronics' MDmesh™ V Power MOSFETsSTMicroelectronics' MDmesh™ V Power MOSFET portfolio offers a broad range of breakdown voltages from -500 V to 1500 V, with low gate charge and low on-resistance, combined with state-of-the-art packaging. STMicroelectronics' process technology for both high-voltage and low-voltage MOSFETs has enhanced power handling capability, resulting in high-efficiency solutions.

Features
  • -500 V to 1500 V breakdown voltage range
  • World's best RDS(on) area for 650 V power MOSFETs (0.029 Ω in the TO-247 package)
  • Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements
  • Intrinsic, fast body diode option for select product lines
In each voltage range, supporting applications such as point of load, telecom DC-DC converters, PFC switch mode power supplies, and automotive equipment, STMicroelectronics has the right MOSFET for your design.
MDmesh V Power MOSFETs
ImageManufacturer Part NumberDescriptionAvailable QuantityBuy Now
MOSFET N-CH 650V 4.3A 8POWERFLATSTL57N65M5MOSFET N-CH 650V 4.3A 8POWERFLAT1626 - Immediate
MOSFET N-CH 650V 84A TO-247STW88N65M5MOSFET N-CH 650V 84A TO-2471241 - Immediate
MOSFET N-CH 650V 138A MAX247STY145N65M5MOSFET N-CH 650V 138A MAX247598 - Immediate
MOSFET N-CH 650V 15A DPAKSTD18N65M5MOSFET N-CH 650V 15A DPAK3892 - Immediate
Published: 2013-06-14