MDmesh II Plus™ Low Qg Power MOSFETs

STMicroelectronics' M2 technology offers superior performance in specific SMPS applications like LLC-type and resonant converters

Image of STMicroelectronics' MDmesh II Plus™ Low Qg Power MOSFETsM2 (MDmesh II Plus™ Low Qg) is the latest technology introduced by ST in the 600 V super-junction MOSFET arena. This technology is aimed to offer the best cost-performance ratio in the industry and offer superior performance in specific SMPS applications like LLC-type and resonant converters, today widely used to power all the low-energy consumption applications such as LED and LCD flat panel TVs. By using a device belonging to the MDMesh II Plus™ Low-Qg technology, the designer will experience an extremely easy-to-use and highly-performing device, which will imply a higher electrical efficiency of the overall converter compared to any other previous ST solution.

Features
  • Extremely low gate charge
  • Lower RDS(on) x area
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected
View all MDmesh II Plus products
MDmesh II Plus Low Qg Power MOSFETs
ImageManufacturer Part NumberDescriptionAvailable QuantityBuy Now
MOSFET N-CH 650V 68A TO247STW70N60M2MOSFET N-CH 650V 68A TO247582 - Immediate
MOSFET N-CH 600V 11A DPAKSTD13N60M2MOSFET N-CH 600V 11A DPAK4478 - Immediate
87500 - Factory Stock
MOSFET N-CH 600V 18A TO-220STP24N60M2MOSFET N-CH 600V 18A TO-220951 - Immediate
MOSFET N-CH 600V 26A TO220STP33N60M2MOSFET N-CH 600V 26A TO220160 - Immediate
MOSFET N-CH 600V 18A TO220FPSTF24N60M2MOSFET N-CH 600V 18A TO220FP1158 - Immediate
MOSFET N-CH 600V 5.5A IPAKSTU9N60M2MOSFET N-CH 600V 5.5A IPAK2995 - Immediate
MOSFET N-CH 600V IPAKSTU7N60M2MOSFET N-CH 600V IPAK1862 - Immediate
MOSFET N-CH 600V 18A POWERFLATSTL24N60M2MOSFET N-CH 600V 18A POWERFLAT2798 - Immediate
MOSFET N-CH 600V 34A TO-247STW40N60M2MOSFET N-CH 600V 34A TO-247586 - Immediate
MOSFET N-CH 600V DPAKSTD10N60M2MOSFET N-CH 600V DPAK924 - Immediate
MOSFET N-CH 600V TO-220STP18N60M2MOSFET N-CH 600V TO-220617 - Immediate
Published: 2014-02-24