Power CSP MOSFETs

Panasonic’s advanced 110 nm fine trench cell silicon technology

Image of Panasonic's Power CSP MOSFETsPanasonic, a worldwide leader in semiconductor products, announces the FJ3P02100L and FK3P02110L series of power CSP MOSFETs. The power CSP MOSFET series features Power Mount CSP Packaging (PMCP) that is comprised of a unique pad design and drain clip technology. This allows for a 5% improvement in thermal dissipation while simultaneously reducing the size by 80% over the conventional solutions. Panasonic’s advances in cell technology and wafer thinning fabrication have led to silicon with a 110 nm fine trench cell that provides 47% lower RDS(on) over the same sized conventional chip. By using this technology, this MOSFET series achieves higher power efficiency while reducing power consumption.

Features
  • Power mount CSP (PMCP) package allows for improved thermal dissipation by 5% while reducing the size by 80% over the conventional solutions
  • AEC-Q101 qualified
  • Fine trench silicon technology provides 47% lower RDS(on) over the same sized conventional chip, achieving higher power efficiency while reducing power consumption of the system
  • Size: FJ3P02100L: 2.0 x 2.0 x 0.33 mm, FK3P02110L: 1.8 x 1.6 x 0.33 mm
  • RDS(on): FJ3P02100L: 9.5 mΩ at VGS=4.5 V (typ.), FK3P02110L: 12.5 mΩ at VGS=2.5 V (typ.)
  • Halogen free and RoHS qualified, with lead-free solder bumps


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Power CSP MOSFETs

ImageManufacturer Part NumberDescriptionPart StatusFET TypeAvailable Quantity
FK3P02110L datasheet linkMOSFET N CH 24V 3A PMCPFK3P02110LMOSFET N CH 24V 3A PMCPActiveMOSFET N-Channel, Metal Oxide6767 - Immediate
FK3P02110L product page link
FJ3P02100L datasheet linkMOSFET P CH 20V 4.4A PMCPFJ3P02100LMOSFET P CH 20V 4.4A PMCPActiveMOSFET P-Channel, Metal Oxide6702 - Immediate
FJ3P02100L product page link
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Published: 2013-07-02