Nexperia's PSMN series of N-channel MOSFETs has been extended to include a range of 30 V, 40 V and 80 V Trench 6 silicon devices in the TO220 package. The new range offers performance improvements in a wide variety of applications.
Trench 6 silicon technology provides Nexperia’s lowest RDS(ON) performance in a TO220 package with 1.4 mΩ typical at Vgs=10 V (PSMN1R6-30PL). These parts are ideal for power OR-ing, motor control, DC-DC converters, PC silverbox power supplies and other demanding industrial applications.
Trench 6 also offers lower gate-charge (Qg) and low gate resistance (Rg) making the devices suitable for high-efficiency power management applications and higher switching frequencies.
The TO220 package delivers compact power in a through hole package. It provides superior thermal resistance when mounted to a heat-sink.
TO220 with Trench 6 MOSFETs