GigaMOS™ TrenchT2™ Power MOSFETs

IXYS power MOSFET solutions for low voltage, high current power conversion systems

Image of IXYS Corporation's GigaMOS™ TrenchT2™ Power MOSFETsIXYS has expanded its GigaMOS product family with the GigaMOS TrenchT2 Standard and HiPerFET™ Power MOSFETs. These devices are offered with drain-to-source voltage ratings from 40 V to 170 V and provide high current capabilities of up to 600 A (Tc @ 25°C). The combined high current ratings of these MOSFETs and available compact package options provide designers with the ability to control more power within a smaller footprint. These devices also promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. This results in a reduction in part count as well as the number of required drive components, thus improving overall system simplicity, reliability, and cost.

  • High current capability (up to 600 A)
  • Low Rds(on) and gate charge (Qg)
  • Incorporates IXYS HiPerFET technology for fast power switching performance
  • Avalanche capabilities
GigaMOS TrenchT2 Power MOSFETs
ImageManufacturer Part NumberDescriptionAvailable QuantityBuy Now
MOSFET N-CH 150V 360A TO264IXFK360N15T2MOSFET N-CH 150V 360A TO264507 - Immediate
MOSFET N-CH 75V 480A SOT227IXFN520N075T2MOSFET N-CH 75V 480A SOT227529 - Immediate
MOSFET N-CH 150V 310A SOT227IXFN360N15T2MOSFET N-CH 150V 310A SOT227636 - Immediate
MOSFET N-CH 170V 260A SOT227IXFN320N17T2MOSFET N-CH 170V 260A SOT227348 - Immediate
MOSFET N-CH 150V 360A PLUS247IXFX360N15T2MOSFET N-CH 150V 360A PLUS247150 - Immediate
MOSFET N-CH 150V 240A TO264IXFK240N15T2MOSFET N-CH 150V 240A TO264169 - Immediate
MOSFET N-CH 170V 320A PLUS247IXFX320N17T2MOSFET N-CH 170V 320A PLUS24786 - Immediate
MOSFET N-CH 170V 320A TO264IXFK320N17T2MOSFET N-CH 170V 320A TO26435 - Immediate
Published: 2014-02-12