IXYS has expanded its GigaMOS product family with the GigaMOS TrenchT2 Standard and HiPerFET™ Power MOSFETs. These devices are offered with drain-to-source voltage ratings from 40 V to 170 V and provide high current capabilities of up to 600 A (Tc @ 25°C). The combined high current ratings of these MOSFETs and available compact package options provide designers with the ability to control more power within a smaller footprint. These devices also promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. This results in a reduction in part count as well as the number of required drive components, thus improving overall system simplicity, reliability, and cost.
- High current capability (up to 600 A)
- Low Rds(on) and gate charge (Qg)
- Incorporates IXYS HiPerFET technology for fast power switching performance
- Avalanche capabilities