Depletion-Mode D2™ Power MOSFETs

Depletion-Mode D2 MOSFETs from IXYS

Image of IXYS Corporation's Depletion-Mode D2™ Power MOSFETsIXYS Depletion-Mode D2™ MOSFETs feature unique characteristics that cannot be replicated by their commonly used enhancement-mode counterpart. Unlike the regular N-channel enhancement-mode type, depletion-mode power MOSFETs require zero gate bias to turn-on and negative gate bias to turn-off but otherwise have similar characteristics. The “normally-on” operational mode of these devices combined with an enhanced linear operating capability allows for an ideal device selection in current sources, current regulators, solid-state relays, level shifting, active loads, start-up circuits, and active power filters.

These devices are available with blocking voltages between 500 V to 1000 V, on-resistance (Rdson) as low as 500 mΩ (max), and drain current ratings of up to 6 A. They can provide simplified control and reduced line voltage dissipation when used for line interface in off-line applications. Since these devices require no energy or gate voltage for turn-on, high-energy efficiency can be achieved through device implementation in zero power “normally-on” load switch applications. With the high degree of current regulation, these devices can also act as active inductors with high dynamic impedance in power filter applications to limit voltage and current noise and spikes. Furthermore, these devices can provide active circuit protection to limit the surge of current during short-circuit or overload conditions.

Depletion-Mode D2 Power MOSFETs
ImageManufacturer Part NumberDescriptionAvailable QuantityBuy Now
MOSFET N-CH 500V 3A D2PAKIXTA3N50D2MOSFET N-CH 500V 3A D2PAK691 - Immediate
MOSFET N-CH 500V 6A D2PAKIXTA6N50D2MOSFET N-CH 500V 6A D2PAK1572 - Immediate
MOSFET N-CH 1000V 6A TO247IXTH6N100D2MOSFET N-CH 1000V 6A TO247868 - Immediate
MOSFET N-CH 500V 800MA DPAKIXTY08N50D2MOSFET N-CH 500V 800MA DPAK2524 - Immediate
MOSFET N-CH 500V 1.6A DPAKIXTY1R6N50D2MOSFET N-CH 500V 1.6A DPAK1485 - Immediate
MOSFET N-CH 500V 6A TO220ABIXTP6N50D2MOSFET N-CH 500V 6A TO220AB459 - Immediate
MOSFET N-CH 500V 800MA D2PAKIXTA08N50D2MOSFET N-CH 500V 800MA D2PAK1953 - Immediate
MOSFET N-CH 1000V 0.8A TO220ABIXTP08N100D2MOSFET N-CH 1000V 0.8A TO220AB443 - Immediate
MOSFET N-CH 500V 800MA TO220ABIXTP08N50D2MOSFET N-CH 500V 800MA TO220AB248 - Immediate
MOSFET N-CH 500V 1.6A TO220ABIXTP1R6N50D2MOSFET N-CH 500V 1.6A TO220AB817 - Immediate
MOSFET N-CH 500V 3A TO220ABIXTP3N50D2MOSFET N-CH 500V 3A TO220AB67 - Immediate
MOSFET N-CH 1000V 1.6A DPAKIXTY1R6N100D2MOSFET N-CH 1000V 1.6A DPAK408 - Immediate
MOSFET N-CH 1000V 6A TO220ABIXTP6N100D2MOSFET N-CH 1000V 6A TO220AB47 - Immediate
MOSFET N-CH 500V 6A TO247IXTH6N50D2MOSFET N-CH 500V 6A TO24758 - Immediate
MOSFET N-CH 1000V 800MA DPAKIXTY08N100D2MOSFET N-CH 1000V 800MA DPAK0
MOSFET N-CH 1000V 3A TO220ABIXTP3N100D2MOSFET N-CH 1000V 3A TO220AB18 - Immediate
MOSFET N-CH 1000V 800MA D2PAKIXTA08N100D2MOSFET N-CH 1000V 800MA D2PAK0
MOSFET N-CH 1000V 1.6A D2PAKIXTA1R6N100D2MOSFET N-CH 1000V 1.6A D2PAK0
MOSFET N-CH 1000V 3A D2PAKIXTA3N100D2MOSFET N-CH 1000V 3A D2PAK25 - Immediate
Published: 2014-02-12