900 V Polar HiPerFET™ Power MOSFETs

From IXYS, rugged and energy efficient MOSFET solutions for power conversion systems

Image of IXYS Corporation's 900 V Polar HiPerFET™ Power MOSFETsIXYS has expanded its Polar HiPerFET MOSFET product portfolio with the 900 V HiPerFET Power MOSFETs. Available with drain current ratings from 10.5 A to 56 A, these 900 V devices compliment IXYS’ high-voltage Polar HiPerFET MOSFET product line (available from 500 V to 1200 V) and provide the end customer a broader selection of robust, energy-efficient, high-voltage MOSFET solutions. The 900 V devices combine advantages derived from IXYS’ Polar technology platform and HiPerFET process to provide improved power efficiency and reliability for today’s demanding high-voltage conversion systems that require bus voltage operation of up to 700 V.

Features
  • International standard packages
  • ISOPLUS high performance package options (2500 V electrical isolation)
  • Fast intrinsic diode
  • Avalanche rated
  • Low package inductance
  • Excellent ruggedness and dV/dt capability
  • High power density

900 V Polar HiPerFET Power MOSFETs

ImageManufacturer Part NumberDescriptionAvailable Quantity
IXFN56N90P datasheet linkMOSFET N-CH 900V 56A SOT-227BIXFN56N90PMOSFET N-CH 900V 56A SOT-227B80 - Immediate
IXFN56N90P product page link
IXFH18N90P datasheet linkMOSFET N-CH TO-247IXFH18N90PMOSFET N-CH TO-24761 - Immediate
IXFH18N90P product page link
IXFT24N90P datasheet linkMOSFET N-CH TO-268IXFT24N90PMOSFET N-CH TO-26860 - Immediate
IXFT24N90P product page link
IXFH24N90P datasheet linkMOSFET N-CH TO-247IXFH24N90PMOSFET N-CH TO-24797 - Immediate
IXFH24N90P product page link
IXFX40N90P datasheet linkMOSFET N-CH PLUS247IXFX40N90PMOSFET N-CH PLUS24737 - Immediate
IXFX40N90P product page link
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Published: 2014-02-12