IXYS has expanded its Polar HiPerFET MOSFET product portfolio with the 900 V HiPerFET Power MOSFETs. Available with drain current ratings from 10.5 A to 56 A, these 900 V devices compliment IXYS’ high-voltage Polar HiPerFET MOSFET product line (available from 500 V to 1200 V) and provide the end customer a broader selection of robust, energy-efficient, high-voltage MOSFET solutions. The 900 V devices combine advantages derived from IXYS’ Polar technology platform and HiPerFET process to provide improved power efficiency and reliability for today’s demanding high-voltage conversion systems that require bus voltage operation of up to 700 V.
- International standard packages
- ISOPLUS high performance package options (2500 V electrical isolation)
- Fast intrinsic diode
- Avalanche rated
- Low package inductance
- Excellent ruggedness and dV/dt capability
- High power density