Energy Efficiency Technologies

Infineon's energy efficiency technology products are enormously important for future energy supplies

Image of Infineon's Energy Efficiency TechnologiesInfineon's products stand out for their reliability, excellent quality, and their innovative and leading edge technology. Their goal is to create competitive advantages for their customers by driving innovative power architectures, leadership in power density, and enabling systems with the best cost performance ratio for notebooks, servers, desktops and graphic cards, consumer SMPS, notebook adapters, PC silverboxes, server power supplies, e-mobility, solar, telecom supply, industrial welding, induction cooking, and air conditioning.

500 V CoolMOS™ CE Power MOSFET 500 V CoolMOS™ CE Power MOSFET

Superjunction technology provides low conduction and switching losses with simple control of switching behavior.

Product Brief         Application Note
40 V/60 V OptiMOS™ 40 V / 60 V OptiMOS™

Infineon's low voltage power MOSFETs are optimized for synchronous rectification in switched-mode power supplies (SMPS) and are the perfect choice for applications including motor control, solar micro inverters, and fast switching DC/DC converters.

Product Brief         Application Note
650 V thinQ!™ SiC Diodes Generation 5 650 V thinQ!™ SiC Diodes Generation 5

A new leading edge technology for SiC Schottky barrier diodes provides the benefit of improved efficiency, reduced EMI, increased system reliability, cost, and size advantages due to reduced cooling requirements.

Product Brief         Article
RC-Drive and RC-Drive Fast RC-Drive and RC-Drive Fast

IGBT technology providing outstanding performance for cost-optimized (RC-Drive) solutions for permanent magnet synchronous and brushless DC motor drives. RC-Drive Fast was developed specifically for low power motors.

Product Brief

500 V CoolMOS™ CE Power MOSFET

ImageManufacturer Part NumberDescriptionFET TypeFET FeatureAvailable Quantity
IPD50R380CEATMA1 datasheet linkMOSFET N CH 500V 9.9A PG-TO252IPD50R380CEATMA1MOSFET N CH 500V 9.9A PG-TO252MOSFET N-Channel, Metal OxideStandard2393 - Immediate
IPD50R380CEATMA1 product page link
IPD50R280CEATMA1 datasheet linkMOSFET N-CH 500V 13A PG-TO252IPD50R280CEATMA1MOSFET N-CH 500V 13A PG-TO252MOSFET N-Channel, Metal OxideStandard2011 - Immediate
IPD50R280CEATMA1 product page link
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40 V / 60 V OptiMOS™

ImageManufacturer Part NumberDescriptionFET TypeFET FeatureAvailable Quantity
BSC014N04LS datasheet linkMOSFET N-CH 40V 32A TDSON-8BSC014N04LSMOSFET N-CH 40V 32A TDSON-8MOSFET N-Channel, Metal OxideStandard2770 - Immediate
BSC014N04LS product page link
BSC014N04LSIATMA1 datasheet linkMOSFET N-CH 40V 100A TDSON-8BSC014N04LSIATMA1MOSFET N-CH 40V 100A TDSON-8MOSFET N-Channel, Metal OxideLogic Level Gate3931 - Immediate
BSC014N04LSIATMA1 product page link
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650 V thinQ!™ SiC Diodes Generation 5

ImageManufacturer Part NumberDescriptionDiode TypeVoltage - DC Reverse (Vr) (Max)Available Quantity
IDH05G65C5 datasheet linkDIODE SCHOTTKY 650V 5A TO220-2IDH05G65C5DIODE SCHOTTKY 650V 5A TO220-2Silicon Carbide Schottky650V246 - Immediate
IDH05G65C5 product page link
IDH04G65C5 datasheet linkDIODE SCHOTTKY 650V 4A TO220-2IDH04G65C5DIODE SCHOTTKY 650V 4A TO220-2Silicon Carbide Schottky650V715 - Immediate
IDH04G65C5 product page link
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RC-Drive and RC-Drive Fast

ImageManufacturer Part NumberDescriptionIGBT TypeVoltage - Collector Emitter Breakdown (Max)Available Quantity
IKD06N60RF datasheet linkIGBT 600V 12A 100W PG-TO252-3IKD06N60RFIGBT 600V 12A 100W PG-TO252-3Trench Field Stop600V6013 - Immediate
IKD06N60RF product page link
IKD03N60RF datasheet linkIGBT 600V 5A 53.6W TO252-3IKD03N60RFIGBT 600V 5A 53.6W TO252-3Trench600V2329 - Immediate
IKD03N60RF product page link
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Published: 2012-10-19