MRFE6S9060NR1 MOSFET

NXP's Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET

Image of Freescale Semiconductor's MRFE6S9060NR1 MOSFETNXP Semiconductor's MRFE6S9060NR1 is designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large signal and common source amplifier applications in 28 V base station equipment.

Features

  • Typical single-carrier N–CDMA performance at 880 MHz, VDD = 28 V, IDQ = 450 mA, Pout = 14 W avg., IS–95 CDMA (pilot, sync, paging, traffic codes 8 through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB at 0.01% probability on CCDF
    • Power gain: 21.1 dB
    • Drain efficiency: 33%
    • ACPR at 750 kHz offset:-45.7 dBc in 30 kHz bandwidth
  • Capable of handling 10:1 VSWR, at 32 VDC, 880 MHz, 3 dB overdrive, designed for enhanced ruggedness

GSM EDGE Application

  • Typical GSM EDGE performance: VDD = 28 V, IDQ = 500 mA, Pout = 21 W avg., full frequency band (920 to 960 MHz)
  • Spectral regrowth at 400 kHz Offset =-62 dBc
  • Spectral regrowth at 600 kHz Offset =-78 dBc
  • Power gain: 20 dB
  • Drain efficiency: 46%
  • EVM: 1.5% rms

GSM Application

  • Typical GSM performance: VDD = 28 V, IDQ = 500 mA, Pout = 60 W, full frequency band (920 to 960 MHz)
  • Characterized with series equivalent large–signal impedance parameters
  • Integrated ESD protection
  • 225°C capable plastic package
  • Power gain: 20 dB
  • Drain efficiency: 63%
  • RoHS compliant

MRFE6S9060NR1 MOSFET

ImageManufacturer Part NumberDescriptionAvailable Quantity
MRFE6S9060NR1 datasheet linkFET RF 66V 880MHZ TO270-2MRFE6S9060NR1FET RF 66V 880MHZ TO270-2641 - Immediate
MRFE6S9060NR1 product page link
Published: 2010-09-27