N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ

Fairchild's high-voltage super-junction MOSFET utilizes charge balance technology

Image of Fairchild's N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ SuperFET® II MOSFET is Fairchild Semiconductor®'s first generation of high-voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate-charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversions for system miniaturization and higher efficiency.

  • 650 V at TJ = 150°C
  • Max. RDS(on) = 380 mΩ
  • Ultra-low gate charge (Typ. Qg = 34nC)
  • Low, effective output capacitance (Typ. C0SS. eff = 97pF)
  • 100% avalanche tested
  • Uninterruptible power supply
  • PDP TV
  • PC servers
  • Notebook PC
  • Lighting
  • LED TV
  • LCD TV
  • LCD monitor
  • EMS
  • DVD/set-top boxes
  • Desktop PC
  • DC-DC merchant power supply
  • Consumer appliances
  • AC-DC merchant power supply


ImageManufacturer Part NumberDescriptionFET TypeTechnologyAvailable Quantity
FCPF380N60_F152 datasheet linkMOSFET N-CH 600V 10.2A TO-220FFCPF380N60_F152MOSFET N-CH 600V 10.2A TO-220FN-ChannelMOSFET (Metal Oxide)500 - Immediate
FCPF380N60_F152 product page link
Published: 2013-09-17