FDMS86350 - 80 V N-Channel PowerTrench® MOSFET

N-Channel MOSFETs minimize on-state resistance and maintain superior switching performance

Fairchild Semiconductor's FDMS86350Fairchild Semiconductor's N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize on-state resistance, yet maintain superior switching performance.


  • Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A
  • Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A
  • Advanced Package and Silicon combination for low rDS(on) and high-efficiency 

80 V N-Channel PowerTrench® MOSFET

ImageManufacturer Part NumberDescriptionFET TypeTechnologyAvailable Quantity
FDMS86350 datasheet linkMOSFET N-CH 80V 80A POWER56FDMS86350MOSFET N-CH 80V 80A POWER56N-ChannelMOSFET (Metal Oxide)12707 - Immediate
FDMS86350 product page link
Published: 2013-07-19