This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance.
- Shielded Gate MOSFET technology
- Max RDS(on) = 6.5 mΩ at VGS = 10 V, LD = 14 A
- Max RDS(on) = 8.5 mΩ at VGS = 8 V, LD = 12 A
- High-performance technology for extremely-low RDS(on)
- Termination is lead-free
- RoHS compliant