FDMC86340 80 V N-Channel Shielded Gate Power Trench® MOSFET

Fairchild's FDMC86340 incorporates shielded gate technology

Image of Fairchild's FDMC86340 80 V N-Channel Shielded Gate Power Trench® MOSFETThis N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintains superior switching performance.


  • Shielded Gate MOSFET technology
  • Max RDS(on) = 6.5 mΩ at VGS = 10 V, LD = 14 A
  • Max RDS(on) = 8.5 mΩ at VGS = 8 V, LD = 12 A
  • High-performance technology for extremely-low RDS(on)
  • Termination is lead-free
  • RoHS compliant

80 V N-Channel MOSFET

ImageManufacturer Part NumberDescriptionPackagingFET TypeFET FeatureAvailable Quantity
MOSFET N-CH 80V 48A POWER33FDMC86340MOSFET N-CH 80V 48A POWER33Cut Tape (CT)MOSFET N-Channel, Metal OxideStandard5480 - Immediate
15000 - Factory Stock
FDMC86340 product page link
Published: 2013-09-17