FDFMA3P029Z PowerTrench® MOSFET

30 V integrated P-channel PowerTrench MOSFET from Fairchild

Image of Fairchild's FDFMA3P029Z PowerTrench® MOSFETFairchild Semiconductor presents a 30 V integrated P-channel PowerTrench MOSFET and Schottky diode. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with very low on-state resistance and an independently connected low forward voltage Schottky diode allows for minimum conduction losses. The MicroFET 2 x 2 mm package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Features
    Schottky
  • VF < 0.37 V @ 500 mA
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2 x 2 mm
  • RoHS-compliant
    MOSFET
  • Max RDS(on) = 87 mΩ at VGS = -10 V, ID = -3.3 A
  • Max RDS(on) = 152 mΩ at VGS = -4.5 V, ID = -2.3 A
  • HBM ESD protection level > 2 KV typical

FDFMA3P029Z

ImageManufacturer Part NumberDescriptionPart StatusFET TypeAvailable Quantity
FDFMA3P029Z datasheet linkMOSFET P CH 30V 3.3A MICRO 2X2FDFMA3P029ZMOSFET P CH 30V 3.3A MICRO 2X2DiscontinuedMOSFET P-Channel, Metal Oxide0FDFMA3P029Z product page link
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Published: 2013-07-02