EPC's EPC2018 gallium nitride power transistor delivers high-frequency switching for exceptional performance in DC-DC power conversion and class D audio applications.
The EPC2018 is a 5.76 mm², 150 VDS, 12 A device with a maximum RDS(on) of 25 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra-high switching frequency, extremely-low RDS(on), exceptionally-low QG, and in a very small package.
Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, wireless power transfer, RF envelope tracking, and hard-switched and high-frequency circuits.
- Ultra-high efficiency
- Ultra-small footprint
- Ultra-low RDS(on)
- Ultra-low QG
- High-frequency DC-DC conversion
- Class D audio
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