EPC2018 150 V eGaN® FET

Efficient Power Conversion offers the high performance EPC2018 150 V eGaN® FET

Image of EPC's EPC2018 150 V eGaN® FETEPC's EPC2018 gallium nitride power transistor delivers high-frequency switching for exceptional performance in DC-DC power conversion and class D audio applications.

The EPC2018 is a 5.76 mm², 150 VDS, 12 A device with a maximum RDS(on) of 25 milliohms with 5 V applied to the gate. This GaN power transistor delivers high performance due to its ultra-high switching frequency, extremely-low RDS(on), exceptionally-low QG, and in a very small package.

Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, wireless power transfer, RF envelope tracking, and hard-switched and high-frequency circuits.

Features Benefits
  • Ultra-high efficiency
  • Ultra-small footprint
  • Ultra-low RDS(on)
  • Ultra-low QG
  • High-frequency DC-DC conversion
  • Class D audio
  • Ocean surface mapping and sonar systems
  • LiDAR aerial mapping

EPC2018 150V eGaN FET

ImageManufacturer Part NumberDescriptionFET TypeFET FeatureAvailable Quantity
TRANS GAN 150V 12A BUMPED DIEEPC2018TRANS GAN 150V 12A BUMPED DIEGaNFET N-Channel, Gallium NitrideStandard5581 - Immediate
EPC2018 product page link
Published: 2013-09-12