The exceptionally high electron mobility and low temperature coefficient of EPC's eGaN FETs allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The EPC2016 eGaN FET is a 3.4 mm2 100 VDS, 11 A device with a maximum RDS(ON) of 16 mΩ and maximum QG of 5.2 nC, with 5 V applied to the gate.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2016 is much smaller and has superior switching performance.
Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, wireless power transfer, and RF Envelope Tracking, along with hard-switched and high frequency circuits.
- Ultra-high efficiency
- Ultra-small footprint
- Ultra low RDS(ON)
- Ultra low QG
- High-frequency DC-DC conversion
- Class D audio amplifiers
- Hard-switched and high-frequency circuits