EPC2016 100 V eGaN® FET

Efficient Power Conversion offers the EPC2016 100 V eGaN® FET

Image of EPC's EPC2016 100 V eGaN® FETThe exceptionally high electron mobility and low temperature coefficient of EPC's eGaN FETs allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.

The EPC2016 eGaN FET is a 3.4 mm2 100 VDS, 11 A device with a maximum RDS(ON) of 16 mΩ and maximum QG of 5.2 nC, with 5 V applied to the gate.

Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2016 is much smaller and has superior switching performance.

Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, wireless power transfer, and RF Envelope Tracking, along with hard-switched and high frequency circuits.

Features Applications
  • Ultra-high efficiency
  • Ultra-small footprint
  • Ultra low RDS(ON)
  • Ultra low QG
  • High-frequency DC-DC conversion
  • Class D audio amplifiers
  • Hard-switched and high-frequency circuits

EPC2016 100 V eGaN® FET

ImageManufacturer Part NumberDescriptionFET TypeTechnologyAvailable Quantity
EPC2016 datasheet linkTRANS GAN 100V 11A BUMPED DIEEPC2016TRANS GAN 100V 11A BUMPED DIEN-ChannelGaNFET (Gallium Nitride)0EPC2016 product page link
Published: 2012-09-18