Development Board EPC9013 for EPC2001

EPC's development board EPC9013 for EPC2001 is optimized for high-current applications.

Image of EPC's Development Board EPC9013 for EPC2001The EPC9013 development board features the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current with four half bridges in parallel and a single onboard gate drive. The purpose of this development board is to simplify the evaluation process of the EPC2001 eGaN® FET for high-current operation by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9013 development board is 2” x 2” and features eight EPC2001 eGaN® FETs using the Texas Instruments LM5113 gate driver. The development board configuration is recommended for high-current applications. The board contains all critical components and the printed circuit board (PCB) layout is designed for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and evaluate eGaN FET efficiency.

EPC2001 Features
  • Ultra-high efficiency
  • Ultra-low VDS(on)
  • Ultra-low QG
  • Ultra-small footprint
EPC2001 Applications
  • High-speed DC-DC conversion
  • Class D audio
  • Hard switched and high frequency circuits

Development Board EPC9013 for EPC2001

ImageManufacturer Part NumberDescriptionAvailable Quantity
EPC9013 datasheet linkBOARD DEV FOR EPC2001 100V EGANEPC9013BOARD DEV FOR EPC2001 100V EGAN30 - Immediate
EPC9013 product page link
EPC2001 datasheet linkTRANS GAN 100V 25A BUMPED DIEEPC2001TRANS GAN 100V 25A BUMPED DIE0EPC2001 product page link
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Published: 2014-01-08