CGHV96050F2 X-Band Radar Transistor

Cree offers 50 W, 7.9 - 9.6 GHz, 50 ohm, input/output matched GaN HEMT for X-Band radar systems

Image of Cree Inc's CGHV96050F2 X-Band Radar TransistorCree’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power-added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, saturated electron drift velocity, and thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

Features
  • 8.4 - 9.6 GHz operation
  • 80 W POUT typical
  • 10 dB power gain
  • 55% typical PAE
  • 50 ohm internally matched
  • <0.1 dB power droop

CGHV96050F2 X-Band Radar Transistor

ImageManufacturer Part NumberDescriptionTransistor TypeFrequencyAvailable Quantity
CGHV96050F2 datasheet linkFET RF 100V 9.6GHZ 440210CGHV96050F2FET RF 100V 9.6GHZ 440210HEMT7.9GHz ~ 9.6GHz149 - Immediate
CGHV96050F2 product page link
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Published: 2014-04-08