CGHV35400F S-Band Radar Transistor

Cree offers 400 W, 2.9 – 3.5 GHz, 50 V, GaN HEMT for S-Band radar systems

Image of Cree Inc's CGHV35400F S-Band Radar TransistorCree’s CGHV35400F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically with high efficiency, high gain, and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440210.

Features
  • 2.9 - 3.5 GHz operation
  • 400 W typical output power
  • 10.5 dB power gain
  • 60% typical drain efficiency
  • 50 ohm internally matched
  • <0.3 dB pulsed amplitude droop

CGHV35400F S-Band Radar Transistors

ImageManufacturer Part NumberDescriptionAvailable Quantity
CGHV35400F datasheet linkFET RF 125V 3.5GHZ 440210CGHV35400FFET RF 125V 3.5GHZ 44021067 - Immediate
CGHV35400F product page link
CGHV35400F-TB datasheet linkTEST FIXTURE FOR CGHV35400FCGHV35400F-TBTEST FIXTURE FOR CGHV35400F2 - Immediate
CGHV35400F-TB product page link
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Published: 2014-04-08