CGHV35150F S-Band Radar Transistor

Cree offers 150 W, 2.9 – 3.5 GHz, 50 V, GaN HEMT for S-Band radar systems

Image of Cree Inc's CGHV35150F S-Band Radar TransistorCree’s CGHV35150 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically with high efficiency, high gain, and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.

Features
  • Rated power = 150 W at TCASE = 85°C
  • Operating frequency = 2.9 - 3.5 GHz
  • Transient 100 µsec - 300 µsec at 20%
  • 13.5 dB power gain at TCASE = 85°C
  • 50% typical drain efficiency at TCASE
  • Input matched
  • <0.3 dB pulsed amplitude droop
CGHV35150F S-Band Radar Transistors
ImageManufacturer Part NumberDescriptionAvailable QuantityBuy Now
FET RF GAN HEMT 150WCGHV35150FFET RF GAN HEMT 150W26 - Immediate
TEST FIXTURE FOR CGHV35150FCGHV35150-TBTEST FIXTURE FOR CGHV35150F2 - Immediate
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Published: 2014-04-08