CCS050M12CM2 Silicon Carbide

CCS050M12CM2 silicon carbide six-pack (three phase) module Z-FET™ MOSFET and Z-Rec™ diode

Image of Cree Inc's CCS050M12CM2 Silicon CarbideCree's silicon-carbide (SiC) six-pack power module comes in an industry-standard, 45 mm package. When replacing a silicon module with equivalent ratings, Cree's six-pack module can reduce power losses by 75%, which leads to an immediate 70% reduction in the size of the heat sink or a 50% increase in power density. The new six-pack SiC module unlocks the traditional design constraints associated with power density, efficiency and cost, thereby enabling the designer to create high-performance, reliable, and low-cost power-conversion systems. When compared to state-of-the-art silicon modules, the SiC 1.2 kV, 50 A modules deliver performance equivalent to silicon modules rated at 150 A.

Features Benefits
  • Ultra-low loss
  • Zero reverse recovery current
  • Zero turn-off tail current
  • High-frequency operation
  • Positive temperature coefficient on VF and VDS(on)
  • Cu baseplate, AlN DBC
  • Enables compact and lightweight systems
  • High efficiency operation
  • Ease of transistor gate control
  • Reduced cooling requirements
  • Reduced system cost
CCS050M12CM2
ImageManufacturer Part NumberDescriptionAvailable QuantityBuy Now
BOARD EVAL ISOL SIC GATE DRIVERCRD-001BOARD EVAL ISOL SIC GATE DRIVER161 - Immediate
MOSFET 6N-CH 1200V 87A MODULECCS050M12CM2MOSFET 6N-CH 1200V 87A MODULE13 - Immediate
Published: 2013-07-08