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Supplier: Cree Inc
Subtitle:
Demo Board Amplifier Circuit CGH40006P
Description:
Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth...
Category: RF, Wireless - RF, IF - Evaluation, Development Kits, Boards |
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Supplier: Cree Inc
Subtitle:
Low Noise Amplifier Demonstrator
Description:
CGH40006S GaN HEMT transistor as a means of demonstrating the wide bandwidth low noise performance and ruggedness of the device.
Category: RF, Wireless - RF, IF - Evaluation, Development Kits, Boards |
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Supplier: Cree Inc
Subtitle:
Demo Board Amplifier Circuit CGH40010
Description:
CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabili...
Category: RF, Wireless - RF, IF - Evaluation, Development Kits, Boards |
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Supplier: Cree Inc
Subtitle:
Demo Board Amplifier Circuit CGH40025
Description:
Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth c...
Category: RF, Wireless - RF, IF - Evaluation, Development Kits, Boards |
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Supplier: Cree Inc
Subtitle:
Demo Board Amplifier Circuit CGH40035
Description:
Cree’s CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
Category: RF, Wireless - RF, IF - Evaluation, Development Kits, Boards |
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Supplier: Cree Inc
Subtitle:
Demo Board Amplifier Circuit CGH40045
Description:
Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
Category: RF, Wireless - RF, IF - Evaluation, Development Kits, Boards |
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Supplier: Cree Inc
Subtitle:
CGH40090PP-TB Demonstration Board
Description:
The CGH40090PP GaN HEMT offers a general purpose, broadband solution to a variety of RF and microwave applications, ideal for linear and compressed amplifier circuits. Cree’s CGH40090PP is an unmatched, gallium nitride high electron mobility transistor. The CGH40090PP, operating from a 28 volt ra...
Category: RF, Wireless - RF, IF - Evaluation, Development Kits, Boards |
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Supplier: Cree Inc
Subtitle:
Demo Board Amplifier Circuit CGH40120
Description:
Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
Category: RF, Wireless - RF, IF - Evaluation, Development Kits, Boards |
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Supplier: Cree Inc
Subtitle:
Demo Board Amplifier Circuit CGH40180
Description:
Cree’s CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
Category: RF, Wireless - RF, IF - Evaluation, Development Kits, Boards |
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Supplier: Cree Inc
Subtitle:
Demo Board Amplifier Circuit CGH55015F
Description:
Cree’s CGH55015F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F1 ideal for 5.5-5.8 GHz WiMAX and linear amplifier applications.
Category: RF, Wireless - RF, IF - Evaluation, Development Kits, Boards |
