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Selected Filters

Selected Category: Semiconductors, Development Tools Remove
Selected Suppliers: Cree Inc Remove

Silicon Carbide Schottky Diode

Cree Inc C3D10170H

Supplier: Cree Inc

Subtitle: Silicon Carbide Schottky Diode
Description: Cree is the world’s leading manufacturer of silicon carbide based diodes for power control and management. Cree’s family of Z-Rec™ rectifiers has essentially no reverse recovery at 600 V, 650 V and 1200 V breakdown and is targeted for applications where low switching loss is required.

Category: Semiconductors, Development ToolsDiscrete SemiconductorsDiodes, RectifiersDiodes - SingleSilicon Carbide Schottky

Silicon Carbide Schottky Diode

Cree Inc Silicon Carbide Schottky Diode

Supplier: Cree Inc

Subtitle: Silicon Carbide Schottky Diode
Description: Cree is the world’s leading manufacturer of silicon carbide based diodes for power control and management. Cree’s family of Z-Rec™ and ZERO RECOVERY® rectifiers has essentially no reverse recovery at 600 V and 1200 V breakdown and is targeted for applications where low switching loss is required.

Category: Semiconductors, Development ToolsDiscrete SemiconductorsDiodes, RectifiersDiodes - ArraysSilicon Carbide Schottky

RF HEMT, HFET, LDMOS FETs

Cree Inc CGH55015F2

Supplier: Cree Inc

Subtitle: 25 W, C-band, Unmatched, GaN HEMT
Description: These are a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes them ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down, flange and solder-d...

Category: Semiconductors, Development ToolsDiscrete SemiconductorsTransistors, FETs, IGBTsRF FETsHEMT, HFET, LDMOS

CAS Silicon Carbide Half-Bridge Module

Cree Inc CAS100H12AM1

Supplier: Cree Inc

Subtitle: Z-FET™ MOSFET and Z-Rec™ Diode
Description: Cree's CAS Silicon Carbide Half-Bridge Module offers the following system benefits; Enables compact and lightweight systems, High efficiency operation, Mitigate over-voltage protection, Ease of transistor gate control, and Reduces thermal requirements.

Category: Semiconductors, Development ToolsSemiconductor ModulesFETs