Serial MRAM
Everspin Technologies Inc
Everspin’s MRAM technology revolutionizes non-volatile memory by storing data using magnetic polarization rather than electric charge. With infinite read and write endurance, MRAM retains data for decades without the need for a battery.
Datasheets:
Product Description
Serial MRAMs run at a fast, 40 MHz clock speed and have no write delays. Unlike traditional EEPROM technologies, MRAM has infinite endurance. Densities from 256Kb to 4Mb are available in a RoHS compliant 8-pin DFN package.
Specifications
- Format - Memory:RAM
- Interface:SPI Serial
- Memory Type:MRAM (Magnetoresistive RAM)
- Package / Case:8-TDFN Exposed Pad ~ 8-VDFN Exposed Pad
- Speed:40MHz ~ 50MHz
Parts
![]() | MR25H256CDC | IC MRAM 256KBIT 40MHZ 8DFN | RAM | MRAM (Magnetoresistive RAM) | 256K (32K x 8) | 40MHz | 8-TDFN Exposed Pad | ![]() |
![]() | MR25H256MDF | IC MRAM 256KBIT 40MHZ 8DFN | RAM | MRAM (Magnetoresistive RAM) | 256K (32K x 8) | 40MHz | 8-VDFN Exposed Pad | ![]() |
![]() | MR25H10CDC | IC MRAM 1MBIT 40MHZ 8DFN | RAM | MRAM (Magnetoresistive RAM) | 1M (128K x 8) | 40MHz | 8-VDFN Exposed Pad | ![]() |
![]() | MR25H10MDF | IC MRAM 1MBIT 40MHZ 8DFN | RAM | MRAM (Magnetoresistive RAM) | 1M (128K x 8) | 40MHz | 8-VDFN Exposed Pad | ![]() |
![]() | MR25H40CDC | IC MRAM 4MBIT 40MHZ 8DFN | RAM | MRAM (Magnetoresistive RAM) | 4M (512K x 8) | 40MHz | 8-VDFN Exposed Pad | ![]() |
![]() | MR25H256CDCR | IC MRAM 256KBIT 40MHZ 8DFN | RAM | MRAM (Magnetoresistive RAM) | 256K (32K x 8) | 40MHz | 8-TDFN Exposed Pad | ![]() |
![]() | MR20H40CDF | IC MRAM 4MBIT 50MHZ 8DFN | RAM | MRAM (Magnetoresistive RAM) | 4M (512K x 8) | 50MHz | 8-VDFN Exposed Pad | ![]() |

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