More about MicroWave Technology, Inc.
Located in California’s Silicon Valley, MicroWave Technology, Inc. (MwT) was founded in 1982 by technical principals with broad experience in Gallium Arsenide (GaAs) device design and fabrication. With a factory occupying 35,000 square feet, the company’s principal assets include both its GaAs semiconductor fab and a hybrid chip and wire microwave integrated circuit (HMIC) manufacturing facility. The vertical manufacturing and product strength provide MwT uncommon ﬂexibility and opportunity in the microwave component marketplace.
MwT is a leading U.S. based merchant manufacturer of discrete Gallium Arsenide diodes and transistors (FETs, pHEMTs, and Gunn Diodes). Early work focusing on device reliability resulted in proprietary metallization systems which make MwT’s devices impervious to hydrogen contamination, now an item of great concern to the high-reliability industry. These devices employ proprietary epi material and quarter micron recessed gate process technology, which result in highly linear (+48 dBm IP3 in a 1 W P-1 dB Wireless Amp) and low phase noise (-125 dBc @ 100 KHz Offset in a 17.5 GHz DRO) devices with power outputs ranging from 10 milliwatts to 5 watts. These devices, sold as chips or in packages, ﬁnd wide use in the ampliﬁcation of signals from 10 MHz to 40 GHz in the transmission or reception of information in wireless infrastructure systems, industrial RF applications, and in various defense and space electronics.
By taking advantage of the low intermodulation distortion characteristics of MwT’s GaAs FETs, the company has enjoyed a growing reputation for its product line of small internally matched modular surface mount transmit and receive ampliﬁer modules aimed at multi-carrier and/or digitally modulated (high linearity) wireless infrastructure and military communication systems. Principal applications are as receiver front ends and as driver or picocell output ampliﬁers in cellular, PCS and WLL base station and military high reliability communication. Noteworthy new products have extremely low input and output return loss providing ease of gain insertion in highly critical high linearity power ampliﬁer cascades. MwT offers its high-reliability proven thin ﬁlm circuit processing capability to both internal and external customer’s usage. Employing thin ﬁlm hybrid microcircuit construction, MwT produces and markets various standard modular ampliﬁer products to 26 GHz. These modules are also building elements for MwT to design and manufacture standard as well as custom connectorized ampliﬁers for defense and telecommunication applications.
MwT has many years of experience creating specialized designs for customers and has a vast library of custom designs based on MwT devices. MwT uses both its standard and custom versions of its parts to produce specialized ampliﬁers and board level products. Our proven experience and track record can help you save design cost, time, and engineering resource. Examples include low frequency LNA, Wireless LNA booster ampliﬁer, Integrated building blocks, high frequency oscillators, evaluation boards and test ﬁxtures.