EPC - EPC designs, develops, markets, and sells Gallium Nitride based power management devices using mature silicon foundries. Enabling the most efficient energy conversion using superior semiconductor materials, EPC was the first to introduce enhancement-mode Gallium-Nitride-on Silicon transistors (eGaN®). Applications for these products include servers, notebooks, netbooks, cell phones, base stations, flat-panel displays and class-D amplifiers with device performance many times greater than the best silicon power MOSFETs. Founded in November 2007, EPC is a fabless company with subcontracted manufacturing in Taiwan.
EPC Low Voltage eGaN® FETs - EPC’s enhancement mode gallium nitride transistors offer designers high performance replacements for power MOSFETs in applications such as switch mode power supplies, wireless power transmission, envelope tracking, RF transmission, and Class-D audio amplifiers.
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|EPC2100 Transistors and EPC9036 Dev Board - Enhancement-mode monolithic half-bridge GaN transistors further widen the efficiency gap between eGaN® technology and traditional silicon. Monolithic half-bridge devices save space, improve efficiency, and lower system costs.
|eGaN FETs-Based Wireless Power Transfer - The superior characteristics of eGaN FETs, such as low-output capacitance, low-input capacitance, low-parasitic inductances, and small-size make them ideal for increasing efficiency in highly-resonant wireless power transfer systems. The EPC9506, EPC9507, and EPC9508 are high-efficiency, zero-voltage switching (ZVS), class-D wireless power transfer amplifier (source) boards operating at up to 6.78 MHz.
|EPC 9016 and 9017 Development Boards - EPC's development boards are in half-bridge configurations containing a single top-side device and two parallel bottom devices. These boards are recommended for high-current, lower-duty cycle applications such as point-of-load converters and non-isolated telecom infrastructure.
|Development Board EPC9013 for EPC2001 - The EPC9013 development board features the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current with four half bridges in parallel and a single onboard gate drive. The purpose of this development board is to simplify the evaluation process of the EPC2001 eGaN® FET for high current operation by including all the critical components on a single board that can be easily connected into any existing converter.
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More About EPC
EPC Corporation was founded in November 2007 by three engineers with a combined 60 years experience in advanced power management devices.
EPC’s CEO, Alex Lidow, is the co-inventor of the HEXFET™ power MOSFET and, in addition to holding positions in R&D, and manufacturing, was the CEO of International Rectifier for 12 years. For over 35 years it has been Alex Lidow’s mission to create new semiconductors that improve our ability to efficiently convert and use energy.
At the time of the founding of EPC, it became clear to the three founders that silicon had reached performance limits. At that time, a possible candidate to displace silicon was gallium nitride, but there were significant problems in cost and device capability. The initial EPC team vowed to develop GaN products that could be used as cost effective power MOSFET replacements which would require innovation in manufacturing, material science, and applying device physics.
In June 2009, EPC delivered the first commercial enhancement mode GaN transistors (eGaN®) that were manufactured in a low-cost foundry in Taiwan used to produce standard silicon CMOS product.
With this milestone reached, EPC, and the entire power management industry, has begun a new journey that holds great promise for a step function of new value added possibilities for the users.
The potential market for EPC’s product is large and fast-growing. The key product areas are voltage controllers such as point-of-load converters, LED boost converters, power MOSFET and IGBT replacements, and RF applications such as power amplifiers for cell phones and base stations.
In order to make EPC’s eGaN transistors easy to use, we developed devices that behave very much like silicon power MOSFETs. This allows experienced designers to leverage their knowledge of power MOSFET design to achieve greater performance than possible in the past.
EPC introduced 10 part numbers in 2009, EPC1001 through EPC1015. These parts cover applications requiring 200V and below. By the end of 2010, we expect about 90% of the applications for power MOSFETs to be successfully addressed with eGaN transistors from EPC.
In those applications where greater efficiency, less space, or operation at much higher frequencies is needed, GaN will quickly displace traditional power MOSFETs. We believe that EPC will be the one to break down these barriers and liberate the engineer from the constraints of silicon.
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Fast Just Got Faster Blog
New technologies such as GaN (gallium nitride) will displace power MOSFET and LDMOS transistors. The Fast Just Got Faster Blog provides an overview of the changes taking place in this technology and addresses a broad range of power conversion issues that are relevant to the technology and associated market applications.
|GaN Transistors for Efficient Power Conversion
Accelerate the Learning Curve
EPC announces the publication of the textbook, GaN Transistors for Efficient Power Conversion, designed to provide power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.
This comprehensive guide provides support for designers eager to incorporate the exceptional benefits of GaN technology into their designs.