EPC - EPC designs, develops, markets, and sells Gallium Nitride based power management devices using mature silicon foundries. Enabling the most efficient energy conversion using superior semiconductor materials, EPC was the first to introduce enhancement-mode Gallium-Nitride-on Silicon transistors (eGaN®). Applications for these products include servers, notebooks, netbooks, cell phones, base stations, flat-panel displays and class-D amplifiers with device performance many times greater than the best silicon power MOSFETs. Founded in November 2007, EPC is a fabless company with subcontracted manufacturing in Taiwan.
EPC Low Voltage eGaN® FETs - EPC’s enhancement mode gallium nitride transistors offer designers high performance replacements for power MOSFETs in applications such as switch mode power supplies, wireless power transmission, envelope tracking, RF transmission, and Class-D audio amplifiers.
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|EPC2033/EPC2034 150 V and 200 V eGaN FETs - The EPC2033 and EPC2034 further expand EPC's family of "Relaxed Pitch" devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.
|EPC9115 500W 1/8th Brick Demonstration Board- EPC's EPC9115 Demonstration Board is a fully regulated, 300 kHz isolated, DC-DC bus converter with a 12 V, 42 A output and a input range of 48 - 60 V. The complete converter fits within a standard eighth-brick envelope, but the demonstration board is over-sized to allow connections for bench evaluation.
|Wide-Input, 20 A, GaN-Based Buck Converter Demonstration Board - The EPC9118 demonstration board is a 5 V output, 400 kHz buck converter with a 20 A maximum output current a 30 V to 60 V input voltage range. The complete power stage, including the EPC2001 and EPC2021 eGaN® FETs, driver, inductor and input/output caps, is in an ultra compact 1” x 1.3” layout to showcase the performance that can be achieved using the eGaN FETs and a traditional MOSFET controller together.
|EPC9037/EPC9041 Development Boards - EPC’s development boards are in a monolithic half- bridge topology with on-board gate drives, featuring the EPC2100/1/5 eGaNICs (Enhancement-mode Galium Nitride Integrated Circuit). The purpose of these development boards is to simplify the evaluation process of these monolithically integrated eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter. The development board is 2” x 2” and contains one eGaNIC in half-bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors.
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More About EPC
EPC Corporation was founded in November 2007 by three engineers with a combined 60 years experience in advanced power management devices.
EPC’s CEO, Alex Lidow, is the co-inventor of the HEXFET™ power MOSFET and, in addition to holding positions in R&D, and manufacturing, was the CEO of International Rectifier for 12 years. For over 35 years it has been Alex Lidow’s mission to create new semiconductors that improve our ability to efficiently convert and use energy.
At the time of the founding of EPC, it became clear to the three founders that silicon had reached performance limits. At that time, a possible candidate to displace silicon was gallium nitride, but there were significant problems in cost and device capability. The initial EPC team vowed to develop GaN products that could be used as cost effective power MOSFET replacements which would require innovation in manufacturing, material science, and applying device physics.
In June 2009, EPC delivered the first commercial enhancement mode GaN transistors (eGaN®) that were manufactured in a low-cost foundry in Taiwan used to produce standard silicon CMOS product.
With this milestone reached, EPC, and the entire power management industry, has begun a new journey that holds great promise for a step function of new value added possibilities for the users.
The potential market for EPC’s product is large and fast-growing. The key product areas are voltage controllers such as point-of-load converters, LED boost converters, power MOSFET and IGBT replacements, and RF applications such as power amplifiers for cell phones and base stations.
In order to make EPC’s eGaN transistors easy to use, we developed devices that behave very much like silicon power MOSFETs. This allows experienced designers to leverage their knowledge of power MOSFET design to achieve greater performance than possible in the past.
EPC introduced 10 part numbers in 2009, EPC1001 through EPC1015. These parts cover applications requiring 200V and below. By the end of 2010, we expect about 90% of the applications for power MOSFETs to be successfully addressed with eGaN transistors from EPC.
In those applications where greater efficiency, less space, or operation at much higher frequencies is needed, GaN will quickly displace traditional power MOSFETs. We believe that EPC will be the one to break down these barriers and liberate the engineer from the constraints of silicon.
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Fast Just Got Faster Blog
New technologies such as GaN (gallium nitride) will displace power MOSFET and LDMOS transistors. The Fast Just Got Faster Blog provides an overview of the changes taking place in this technology and addresses a broad range of power conversion issues that are relevant to the technology and associated market applications.
|Wireless Power Handbook
A Supplement to GaN Transistors for Efficient Power Conversion
A major challenge for implementing wireless power is the design of the amplifier. From experimental results presented in this book, it is clear that the ZVS Class D topology, fitted with eGaN power transistors provides the best solution.
Wireless Power Handbook
|GaN Transistors for Efficient Power Conversion
Accelerate the Learning Curve
EPC announces the publication of the textbook, GaN Transistors for Efficient Power Conversion, designed to provide power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.
This comprehensive guide provides support for designers eager to incorporate the exceptional benefits of GaN technology into their designs.