- EPC designs, develops, markets, and sells Gallium Nitride based power management devices using mature silicon foundries. Enabling the most efficient energy conversion using superior semiconductor materials, EPC was the first to introduce enhancement-mode Gallium-Nitride-on Silicon transistors (eGaN®). Applications for these products include servers, notebooks, netbooks, cell phones, base stations, flat-panel displays and class-D amplifiers with device performance many times greater than the best silicon power MOSFETs. Founded in November 2007, EPC is a fabless company with subcontracted manufacturing in Taiwan.

EPC Low Voltage eGaN® FETs
EPC Low Voltage eGaN® FETs
- EPC’s enhancement mode gallium nitride transistors offer designers high performance replacements for power MOSFETs in applications such as switch mode power supplies, wireless power transmission, envelope tracking, RF transmission, and Class-D audio amplifiers.


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Go To Product Training Module Index Page

Digi-Key’s library of more than 2000 exclusive PTM Online… On Demand® product training modules is a collection of training tools created with you – the busy design engineer – in mind. They are provided with the cooperation of participating supplier partners. From this one source, you can learn about the latest products and technologies, download datasheets, check inventory, contact our technical staff, and place an order for same-day shipment.

These modules are available in audio and non-audio formats and listed by supplier in easy-to-find alphabetical order. Simply locate the module that interests you and click on your format of choice. We hope you find these tools useful, and with new modules added continuously, we invite you to stop back often to see what’s new.

Product Training Modules Online...On Demand® is a registered trademark of Digi-Key Corporation.

Updated PTM = Updated Product Training Module - PTM        New PTM = New Product Training Module - PTM

Module NamePreviewAudioNon-AudioDurationParts List
  • Driving eGaN FETs with the LM5113
5.8MB1.5MB10 minParts List
  • Driving eGaN® Power Transistors
3.7MB300KB5 minParts List
  • eGaN® Basics
5.1MB716KB10 minParts List
  • eGaN® FET Reliability
4.5MB715KB5 minParts List
  • eGan® FET's Characteristics
3.8MB750KB5 minParts List
  • eGan® FETs for DC-DC Conversion
4.5MB813KB5 minParts List
  • High Step Down Ratio Buck Converters Overview
5.8MB1.3MB5 minParts List
  • Paralleling eGaN® FETs
3.9MB822KB10 minParts List
  • Second Gen Lead Free eGaN® FETs Overview
2.4MB429KB5 minParts List

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EPC2025 300 V Enhancement-Mode GaN TransistorsEPC2025 300 V Enhancement-Mode GaN Transistors - High-voltage enhancement-mode GaN transistors save space, improve efficiency, and lower system costs.  More...

EPC2100 Transistors and EPC9036 Dev BoardEPC2100 Transistors and EPC9036 Dev Board - Enhancement-mode monolithic half-bridge GaN transistors further widen the efficiency gap between eGaN® technology and traditional silicon. Monolithic half-bridge devices save space, improve efficiency, and lower system costs.  More...

Product Information

EPC Lead Free RoHS Statement
Assembling EPC eGaN FETs
eGaN FET Assembly Quick Reference - Die Attach Procedure
eGaNFET Assembly Quick Reference - Die Removal Procedure
EPC eGaN FET Application Readiness: Phase One Testing
EPC eGaN FET Application Readiness: Phase Two Testing
EPC eGaN FET Application Readiness: Phase Three Testing
EPC eGaN FET Application Readiness: Phase Four Testing
EPC eGaN FET Application Readiness: Phase Five Testing

Application Notes

AN001: Is it the End of the Road for Silicon in Power Conversion
AN002: Fundamentals of eGaN FETs
AN013 Characteristics of Second Generation eGaN FETs
AN004: eGaN Parametric Characterization Guide
AN010: Visual Characterization Guide
AN011: Thermal Performance of eGaN FETs
AN014: eGaN FET Safe Operating Area
AN003: Using eGaN FETS
AN005: Circuit Simulation Using Device Models
AN015: eGaN FETs for Multi-Megahertz applications

White Papers

WP001: Gallium Nitride (GaN) Technology Overview
WP007: eGaN FET Electrical Characteristics
WP008: eGaN FET Drivers and Layout
WP005: Paralleling eGaN FETs
WP002: Benchmark DC-DC Conversion Efficiency with eGaN FET-Based Buck Converters
WP006: Efficient Isolated Full Bridge Converter
WP004: Improve DC-DC Forward Converter Efficiency
WP003: Improve DC-DC Flyback Converter Efficiency
WP009: Impact of Parasitics on Performance
WP010: Optimizing PCB Layout with eGaN FETs
WP011: Selecting eGaN FET Optimal On-Resistance
WP012: Dead-Time Optimization for Maximum Efficiency
WP013: eGaN FETs for Envelope Tracking Applications
WP014: eGaN FETs for Wireless Power Transfer Applications
WP015: eGaN FETs in High Frequency Resonant Converters
WP016: eGaN FETs Small Signal RF Performance

Tools and Software

Circuit Simulation Using EPC SPICE Models
Device Models
Demo Boards
How to Turn an EPC Development Board into a Prototype
Development Board EPC9001 Quick Start Guide
Development Board EPC9002 Quick Start Guide
Development Board EPC9003 Quick Start Guide
Development Board EPC9004 Quick Start Guide
Development Board EPC9005 Quick Start Guide
Development Board EPC9006 Quick Start Guide
Development Board EPC9010 Quick Start Guide
Development Board EPC9016 Quick Start Guide
Development Board EPC9027 Quick Start Guide
Demo Board EPC9101 Quick Start Guide
Demo Board EPC9102 Quick Start Guide
Demo Board EPC9107 Quick Start Guide
More About EPC

EPC Corporation was founded in November 2007 by three engineers with a combined 60 years experience in advanced power management devices.

EPC’s CEO, Alex Lidow, is the co-inventor of the HEXFET™ power MOSFET and, in addition to holding positions in R&D, and manufacturing, was the CEO of International Rectifier for 12 years. For over 35 years it has been Alex Lidow’s mission to create new semiconductors that improve our ability to efficiently convert and use energy.

At the time of the founding of EPC, it became clear to the three founders that silicon had reached performance limits. At that time, a possible candidate to displace silicon was gallium nitride, but there were significant problems in cost and device capability. The initial EPC team vowed to develop GaN products that could be used as cost effective power MOSFET replacements which would require innovation in manufacturing, material science, and applying device physics.

In June 2009, EPC delivered the first commercial enhancement mode GaN transistors (eGaN®) that were manufactured in a low-cost foundry in Taiwan used to produce standard silicon CMOS product.

With this milestone reached, EPC, and the entire power management industry, has begun a new journey that holds great promise for a step function of new value added possibilities for the users.

The potential market for EPC’s product is large and fast-growing. The key product areas are voltage controllers such as point-of-load converters, LED boost converters, power MOSFET and IGBT replacements, and RF applications such as power amplifiers for cell phones and base stations.

In order to make EPC’s eGaN transistors easy to use, we developed devices that behave very much like silicon power MOSFETs. This allows experienced designers to leverage their knowledge of power MOSFET design to achieve greater performance than possible in the past.

EPC introduced 10 part numbers in 2009, EPC1001 through EPC1015. These parts cover applications requiring 200V and below. By the end of 2010, we expect about 90% of the applications for power MOSFETs to be successfully addressed with eGaN transistors from EPC.

In those applications where greater efficiency, less space, or operation at much higher frequencies is needed, GaN will quickly displace traditional power MOSFETs. We believe that EPC will be the one to break down these barriers and liberate the engineer from the constraints of silicon.

November 5-8, 2014
Shanghai, China

Highly Efficient Gallium Nitride Transistors Designed for High Power Density and High Output Current DC-DC Converters
Speaker: David Reusch, Ph.D.; Director of Applications

DesignCon 2015
January 27-30, 2015
Santa Clara, California, USA

Faster and Lower Cost than Silicon - GaN is Making a New Future
Speaker: Alex Lidow, Ph.D; CEO and Co-Founder

Compound Semiconductor International Conference
March 11-12, 2015
Munich, Germany

Ditching the package to drive down GaN transistor costs
Speaker: Alex Lidow, Ph.D.; CEO and co-founder

Available Online

How to GaN Educational Series
Connect with EPC


Additional Links

FAQ's from EPC

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Stay current on EPC’S new products and design resources with our e-updates.

Fast Just Got Faster Blog
New technologies such as GaN (gallium nitride) will displace power MOSFET and LDMOS transistors. The Fast Just Got Faster Blog provides an overview of the changes taking place in this technology and addresses a broad range of power conversion issues that are relevant to the technology and associated market applications.

EPC News

Press Releases
GaN Market News
GaN Transistors for Efficient Power Conversion

Accelerate the Learning Curve

EPC announces the publication of the textbook, GaN Transistors for Efficient Power Conversion, designed to provide power system design engineers basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.

This comprehensive guide provides support for designers eager to incorporate the exceptional benefits of GaN technology into their designs.

GaN Transistors for Efficient Power Conversion

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