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This tutorail will provide an overview of reliability testing and discuss how it is appropriately applied to eGaN FETs. In 2009, EPC introduced the first enhancement-mode Gallium Nitride (eGaN) FETs designed specifically as replacements for power MOSFETs.  These products were designed to be produced in high volume at low cost using standard silicon manufacturing technology and facilities.  Thirty years of silicon power-MOSFET development illustrated that one of the key variables controlling the adoption rate of a disruptive technology is whether or not the product is reliable enough to use in the application. This principle has guided the design of EPC’s eGaN FETs. 

Updated PTM = Updated Product Training Module - PTM     New PTM = New Product Training Module - PTM
     EPCPreviewAudioNon-AudioDurationParts List
  • eGaN® FET Reliability
4.5MB715KB5 minParts List

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